1999. 11. 16 1/3 semiconductor technical data KTB1151 epitaxial planar pnp transistor revision no : 1 low collector saturation voltage large current features high power dissipation : p c =1.5w(ta=25 1 ) complementary to ktd1691. maximum rating (ta=25 1 ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.1 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 14.0 min 2.3 0.1 0.75 0.15 1.6 3.4 max b 1 23 + _ + _ + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -7 v collector current dc i c -5 a pulse * i cp -8 base current i b -1 a collector power dissipation ta=25 1 p c 1.5 w tc=25 1 20 junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -10 a emitter cut-off current i ebo v eb =-7v, i c =0 - - -10 a dc current gain * h fe 1 v ce =-1v, i c =-0.1a 60 - - h fe 2 (note) v ce =-1v, i c =-2a 160 - 400 h fe 3 v ce =-2v, i c =-5a 50 - - collector-emitter saturation voltage * v ce(sat) i c =-2a, i b =-0.2a - -0.14 -0.3 v base-emitter saturation voltage * v be(sat) i c =-2a, i b =-0.2a - -0.9 -1.2 v switching time turn on time t on - 0.15 1 s storage time t stg - 0.78 2.5 fall time t f - 0.18 1 * pulse test : pw * 350 s, duty cycle * 2% pulse note) h fe (2) classification : o:160 320, y:200 400. * pw * 10ms, duty cycle * 50% i b1 5 ? b1 i cc v =-10v i b2 i b2 20 sec -i =i =0.2a 1% b1 b2 output duty cycle input 0 < =
1999. 11. 16 2/3 KTB1151 revision no : 1 -6 collector current i (a) c -10 -1.2 -0.8 -0.4 0 collector-emitter voltage v (v) ce ce c i - v pc - ta ambient temperature ta ( c) 0 0 power dissipation p (w) c 50 100 150 200 250 5 10 15 20 25 case temperature tc ( c) i derating d (%) 0 0 120 50 160 200 100 150 d - t tc t c 40 80 0 -2 -20 -80 -40 -60 -100 s/ b limited dis sipatio n li m ite d safe operating area ce collector-emitter voltage v (v) -1 -3 -10 -30 -0.1 c collector current i (a) -100 -0.3 -0.5 -1 -3 -5 -10 -5 -50 2ms* 10 m s* 200 ms dissipation l imite d s/b li m ite d v max. ceo i (dc)max. i (pulse)max. c safe operating area -4 -6 -8 -10 25 75 125 175 20 60 100 140 v (sus) ceo collector current i (a) c collector-emitter voltage v (v) ce -1.2 -1.6 -2.0 -2 -4 -8 i =0ma b i =-10ma b i =-20ma b i =-30ma b i =-40ma b i =-60ma b i =-80ma b i =-100ma b i =-150ma b i =-200ma b dc current gain h fe -0.01 collector current i (a) c h - i fe c -0.03 -0.1 -0.3 -1 -3 -10 1 3 5 10 30 50 100 300 500 1k v =-2 v ce v =-1 v ce c * single nonrepetive pulsed ta=25 c curves must be derated linerly with increase in temperature tc=ta infinite heat sink reverse bias
|
